AOK27S60L 600v 27a mos tm power transistor general description product summary v ds @ t j,max 700v i dm 110a r ds(on),max 0.16 q g,typ 26nc e oss @ 400v 6 j 100% uis tested 100% r g tested symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r ja r cs r jc -55 to 150 100 20 357 maximum junction-to-ambient a,d 300 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j parameter 0.35 AOK27S60L AOK27S60L 40 0.5 480 v/ns c/w w/ o c c thermal characteristics c/w maximum junction-to-case c junction and storage temperature range maximum case-to-sink a c/w the AOK27S60L has been fabricated using the advanced mos tm high voltage process that is designed to deliver high levels of performance and robustnes s in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability this part can be ad opted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 600 units a 7.5 30 gate-source voltage va 110 t c =100c pulsed drain current c continuous drain current 2.9 t c =25c i d avalanche current c 27 17 derate above 25 o c power dissipation b single pulsed avalanche energy g w 110 p d repetitive avalanche energy c mj mj t c =25c dv/dt g d s g d s top view to-247 AOK27S60L rev 1.0: sepetember 2017 www.aosmd.com page 1 of 6 downloaded from: http:///
symbol min typ max units 600 - - 650 700 - - - 1 - 10 - i gss gate-body leakage current - - 100 n v gs(th) gate threshold voltage 2.5 3.3 4 v - 0.14 0.16 - 0.38 0.44 v sd - 0.85 - v i s maximum body-diode continuous current - - 27 a i sm - - 110 a c iss - 1294 - pf c oss - 80 - pf c o(er) - 69 - pf c o(tr) - 221 - pf c rss - 2.3 - pf r g - 4.7 - q g - 26 - nc q gs - 6.2 - nc q gd - 8.8 - nc t d(on) - 31 - ns t r - 33 - ns t d(off) - 99 - ns t f - 34 - ns t rr - 440 - ns i rm - 28 - a q rr - 7.5 - c applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. vgs=0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250a, v gs =0v, t j =150c effective output capacitance, energy related h vgs=0v, v ds =0 to 480v, f=1mhz switching parameters i dss effective output capacitance, time related i r ds(on) static drain-source on-resistance i s =13.5a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance i f =13.5a,di/dt=100a/ s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =13.5a, r g =25 turn-off fall time total gate charge v gs =10v, v ds =480v, i d =13.5a gate source charge gate drain charge v gs =10v, i d =13.5a, t j =25c v ds =480v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =13.5a,di/dt=100a/ s,v ds =400v maximum body-diode pulsed current turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time peak reverse recovery current i f =13.5a,di/dt=100a/ s,v ds =400v v v gs =10v, i d =13.5a, t j =150c drain-source breakdown voltage i d =250a, v gs =0v, t j =25c a v ds =0v, v gs =30v v ds =600v, v gs =0v v ds =5v,i d =250 a a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =4a, v dd =150v, starting t j =25 c h. c o(er) is a fixed capacitance that gives the same stored e nergy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. rev 1.0: sepetember 2017 www.aosmd.com page 2 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 i d (a) v ds (volts) figure 1: on-region characteristics@25 c v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 1000 2 4 6 8 10 i d (a) v gs (volts) figure 3: transfer characteristics - 55 c v ds =20v 25 c 125 c 0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 60 r ds(on) ( ) i d (a) figure 4: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 5: on-resistance vs. junction temperature v gs =10v i d =13.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 6: break down vs. junction temperature 0 5 10 15 20 25 30 35 40 0 5 10 15 20 i d (a) v ds (volts) figure 2: on-region characteristics@125 c v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v rev 1.0: sepetember 2017 www.aosmd.com page 3 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 40 v gs (volts) q g (nc) figure 8: gate-charge characteristics v ds =480v i d =13.5a 1 10 100 1000 10000 0 100 200 300 400 500 600 capacitance (pf) v ds (volts) figure 9: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1000 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating area for AOK27S60L (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 7: body-diode characteristics (note e) 25 c 125 c 0 2 4 6 8 10 12 0 100 200 300 400 500 600 eoss(uj) v ds (volts) figure 10: coss stored energy e oss rev 1.0: sepetember 2017 www.aosmd.com page 4 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 100 200 300 400 500 25 50 75 100 125 150 175 e as (mj) t case (c) figure 12: avalanche energy 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal imp edance for AOK27S60L (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.35 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse rev 1.0: sepetember 2017 www.aosmd.com page 5 of 6 downloaded from: http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 1.0: sepetember 2017 www.aosmd.com page 6 of 6 downloaded from: http:///
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